Produkte > BRIDGELUX > BXT280N02B
BXT280N02B

BXT280N02B BRIDGELUX

BXT280N02B.pdf
Hersteller: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
auf Bestellung 3990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
388+0.21 EUR
452+0.19 EUR
565+0.15 EUR
631+0.13 EUR
755+0.11 EUR
1000+0.1 EUR
2000+0.089 EUR
Mindestbestellmenge: 313 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BXT280N02B BRIDGELUX

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 4A, Power dissipation: 1.6W, Case: SOP8, Gate-source voltage: ±12V, On-state resistance: 38mΩ, Mounting: SMD, Gate charge: 5.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 24A.