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BXT280N02B

BXT280N02B BRIDGELUX

BXT280N02B.pdf Hersteller: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
394+0.18 EUR
462+0.16 EUR
578+0.12 EUR
645+0.11 EUR
771+0.093 EUR
1000+0.084 EUR
2000+0.074 EUR
4000+0.066 EUR
Mindestbestellmenge: 313
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Technische Details BXT280N02B BRIDGELUX

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8, Polarisation: unipolar, Case: SOP8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET x2, Gate charge: 5.5nC, On-state resistance: 38mΩ, Power dissipation: 1.6W, Drain current: 4A, Gate-source voltage: ±12V, Drain-source voltage: 20V, Pulsed drain current: 24A, Kind of package: reel; tape.