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BXT280N02B

BXT280N02B BRIDGELUX

BXT280N02B.pdf
Hersteller: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Drain current: 4A
Pulsed drain current: 24A
Gate charge: 5.5nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
394+0.18 EUR
458+0.16 EUR
575+0.12 EUR
642+0.11 EUR
767+0.093 EUR
1000+0.084 EUR
2000+0.074 EUR
Mindestbestellmenge: 313
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Technische Details BXT280N02B BRIDGELUX

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Power dissipation: 1.6W, Case: SOP8, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 38mΩ, Drain current: 4A, Pulsed drain current: 24A, Gate charge: 5.5nC, Gate-source voltage: ±12V, Drain-source voltage: 20V, Kind of channel: enhancement.