BXT280N02B BRIDGELUX
Hersteller: BRIDGELUXCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
Polarisation: unipolar
Case: SOP8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 509 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 391+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 509+ | 0.14 EUR |
| 1000+ | 0.084 EUR |
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Technische Details BXT280N02B BRIDGELUX
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET x2, Gate charge: 5.5nC, On-state resistance: 38mΩ, Power dissipation: 1.6W, Drain current: 4A, Gate-source voltage: ±12V, Drain-source voltage: 20V, Pulsed drain current: 24A, Kind of package: reel; tape, Polarisation: unipolar, Case: SOP8, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT280N02B nach Preis ab 0.14 EUR bis 0.23 EUR
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BXT280N02B | Hersteller : BRIDGELUX |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Gate charge: 5.5nC On-state resistance: 38mΩ Power dissipation: 1.6W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 24A Kind of package: reel; tape Polarisation: unipolar Case: SOP8 |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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