BXT280N02B BRIDGELUX
Hersteller: BRIDGELUXCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Case: SOP8
Drain-source voltage: 20V
Drain current: 4A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3060 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 585+ | 0.12 EUR |
| 730+ | 0.098 EUR |
| 935+ | 0.077 EUR |
| 990+ | 0.072 EUR |
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Technische Details BXT280N02B BRIDGELUX
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8, Case: SOP8, Drain-source voltage: 20V, Drain current: 4A, On-state resistance: 38mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 1.6W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 5.5nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 24A, Mounting: SMD, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote BXT280N02B nach Preis ab 0.072 EUR bis 0.12 EUR
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BXT280N02B | Hersteller : BRIDGELUX |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Case: SOP8 Drain-source voltage: 20V Drain current: 4A On-state resistance: 38mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 24A Mounting: SMD |
auf Bestellung 3060 Stücke: Lieferzeit 14-21 Tag (e) |
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