BXT330N02M BRIDGELUX
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Pulsed drain current: 24A
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Case: SOT23
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Pulsed drain current: 24A
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details BXT330N02M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23, Case: SOT23, Type of transistor: N-MOSFET, Kind of package: reel, Mounting: SMD, Polarisation: unipolar, Gate charge: 11nC, On-state resistance: 33mΩ, Power dissipation: 1.25W, Pulsed drain current: 24A, Drain current: 6A, Gate-source voltage: ±10V, Drain-source voltage: 20V, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT330N02M
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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BXT330N02M | Hersteller : BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23 Case: SOT23 Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 11nC On-state resistance: 33mΩ Power dissipation: 1.25W Pulsed drain current: 24A Drain current: 6A Gate-source voltage: ±10V Drain-source voltage: 20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |