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BXT600P03M

BXT600P03M BRIDGELUX


BXT600P03M.pdf
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 2550 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
562+0.13 EUR
802+0.089 EUR
1005+0.071 EUR
1124+0.064 EUR
1337+0.053 EUR
1489+0.048 EUR
Mindestbestellmenge: 278
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Technische Details BXT600P03M BRIDGELUX

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: SOT23-3, Polarisation: unipolar, Drain-source voltage: -30V, Pulsed drain current: -16.4A, Drain current: -2.7A, Gate charge: 6.8nC, On-state resistance: 85mΩ, Power dissipation: 1.51W, Gate-source voltage: ±20V, Kind of channel: enhancement, Mounting: SMD.