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BXT600P03M

BXT600P03M BRIDGELUX

BXT600P03M.pdf
Hersteller: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23-3
On-state resistance: 85mΩ
Mounting: SMD
Pulsed drain current: -16.4A
Power dissipation: 1.51W
Gate charge: 6.8nC
Polarisation: unipolar
auf Bestellung 2540 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
550+0.15 EUR
787+0.11 EUR
985+0.087 EUR
1102+0.077 EUR
1313+0.064 EUR
1458+0.058 EUR
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Technische Details BXT600P03M BRIDGELUX

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Drain current: -2.7A, Kind of channel: enhancement, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT23-3, On-state resistance: 85mΩ, Mounting: SMD, Pulsed drain current: -16.4A, Power dissipation: 1.51W, Gate charge: 6.8nC, Polarisation: unipolar.