BXT600P03M BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.51W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16.4A
Mounting: SMD
Case: SOT23-3
Drain-source voltage: -30V
Drain current: -2.7A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2725 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 521+ | 0.14 EUR |
| 749+ | 0.096 EUR |
| 935+ | 0.077 EUR |
| 1047+ | 0.068 EUR |
| 1634+ | 0.044 EUR |
| 1725+ | 0.041 EUR |
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Technische Details BXT600P03M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, On-state resistance: 85mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.51W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 6.8nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: -16.4A, Mounting: SMD, Case: SOT23-3, Drain-source voltage: -30V, Drain current: -2.7A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT600P03M nach Preis ab 0.041 EUR bis 0.29 EUR
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BXT600P03M | Hersteller : BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -16.4A Mounting: SMD Case: SOT23-3 Drain-source voltage: -30V Drain current: -2.7A |
auf Bestellung 2725 Stücke: Lieferzeit 14-21 Tag (e) |
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