BXT600P03M BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2350 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 569+ | 0.13 EUR |
| 812+ | 0.088 EUR |
| 1019+ | 0.07 EUR |
| 1139+ | 0.063 EUR |
| 1356+ | 0.053 EUR |
| 1507+ | 0.047 EUR |
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Technische Details BXT600P03M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Drain current: -2.7A, Gate charge: 6.8nC, On-state resistance: 85mΩ, Power dissipation: 1.51W, Gate-source voltage: ±20V, Kind of channel: enhancement, Type of transistor: P-MOSFET, Kind of package: reel; tape, Mounting: SMD, Case: SOT23-3, Polarisation: unipolar, Drain-source voltage: -30V, Pulsed drain current: -16.4A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT600P03M nach Preis ab 0.047 EUR bis 0.26 EUR
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BXT600P03M | Hersteller : BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Drain current: -2.7A Gate charge: 6.8nC On-state resistance: 85mΩ Power dissipation: 1.51W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23-3 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -16.4A |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
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