BXT600P03M BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -16.4A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2350 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 562+ | 0.13 EUR |
| 802+ | 0.089 EUR |
| 1007+ | 0.071 EUR |
| 1127+ | 0.063 EUR |
| 1341+ | 0.053 EUR |
| 1493+ | 0.048 EUR |
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Technische Details BXT600P03M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Mounting: SMD, Kind of package: reel; tape, Case: SOT23-3, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -2.7A, Pulsed drain current: -16.4A, Gate charge: 6.8nC, On-state resistance: 85mΩ, Power dissipation: 1.51W, Gate-source voltage: ±20V, Kind of channel: enhancement, Type of transistor: P-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXT600P03M nach Preis ab 0.048 EUR bis 0.26 EUR
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BXT600P03M | Hersteller : BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Kind of package: reel; tape Case: SOT23-3 Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -16.4A Gate charge: 6.8nC On-state resistance: 85mΩ Power dissipation: 1.51W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
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