BXT600P03M BRIDGELUX
Hersteller: BRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: SOT23-3
Drain current: -2.7A
On-state resistance: 85mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.51W
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -16.4A
Drain-source voltage: -30V
Anzahl je Verpackung: 20 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 940+ | 0.077 EUR |
| 1040+ | 0.069 EUR |
| 1360+ | 0.053 EUR |
| 1440+ | 0.05 EUR |
| 12000+ | 0.048 EUR |
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Technische Details BXT600P03M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Mounting: SMD, Polarisation: unipolar, Kind of package: reel; tape, Case: SOT23-3, Drain current: -2.7A, On-state resistance: 85mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.51W, Gate charge: 6.8nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -16.4A, Drain-source voltage: -30V, Anzahl je Verpackung: 20 Stücke.
Weitere Produktangebote BXT600P03M nach Preis ab 0.05 EUR bis 0.077 EUR
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BXT600P03M | Hersteller : BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: SOT23-3 Drain current: -2.7A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16.4A Drain-source voltage: -30V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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