BXW10M1K2H BRIDGELUX
Hersteller: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
On-state resistance: 610mΩ
Type of transistor: N-MOSFET
Power dissipation: 80.6W
Kind of package: tube
Gate charge: 29nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -3...20V
Pulsed drain current: 40A
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
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Technische Details BXW10M1K2H BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 10A, On-state resistance: 610mΩ, Type of transistor: N-MOSFET, Power dissipation: 80.6W, Kind of package: tube, Gate charge: 29nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -3...20V, Pulsed drain current: 40A, Mounting: THT, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BXW10M1K2H
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BXW10M1K2H | Hersteller : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 610mΩ Type of transistor: N-MOSFET Power dissipation: 80.6W Kind of package: tube Gate charge: 29nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -3...20V Pulsed drain current: 40A Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |