BXW10M1K2H BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W, Polarisation: unipolar, Case: TO247-3, Gate-source voltage: -3...20V, Gate charge: 29nC, On-state resistance: 610mΩ, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 80.6W, Drain-source voltage: 1.2kV, Kind of package: tube, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Mounting: THT, Anzahl je Verpackung: 1 Stücke.