BXW10M1K2H BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W, Polarisation: unipolar, On-state resistance: 610mΩ, Type of transistor: N-MOSFET, Power dissipation: 80.6W, Kind of package: tube, Gate charge: 29nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -3...20V, Pulsed drain current: 40A, Mounting: THT, Case: TO247-3, Drain-source voltage: 1.2kV, Drain current: 10A, Anzahl je Verpackung: 1 Stücke.