BXW18M1K2H BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 72A; 96.9W, Technology: SiC, Case: TO247-3, Mounting: THT, On-state resistance: 345mΩ, Kind of package: tube, Power dissipation: 96.9W, Gate charge: 44nC, Kind of channel: enhanced, Gate-source voltage: -3...20V, Pulsed drain current: 72A, Drain-source voltage: 1.2kV, Drain current: 18A, Type of transistor: N-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 100 Stücke.