BXW60M1K2J BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 170nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -3...18V, Pulsed drain current: 240A, Mounting: THT, Case: TO247-4, Drain-source voltage: 1.2kV, Drain current: 60A, On-state resistance: 80mΩ, Type of transistor: N-MOSFET, Power dissipation: 271.7W, Anzahl je Verpackung: 1 Stücke.