BZD17C12P RVG

BZD17C12P RVG Taiwan Semiconductor Corporation


BZD17C%20SERIES_L2103.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 800MW SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±5.41%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Sub SMA
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
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Technische Details BZD17C12P RVG Taiwan Semiconductor Corporation

Description: DIODE ZENER 12V 800MW SUB SMA, Packaging: Tape & Reel (TR), Tolerance: ±5.41%, Package / Case: DO-219AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Voltage - Zener (Nom) (Vz): 12 V, Impedance (Max) (Zzt): 7 Ohms, Supplier Device Package: Sub SMA, Power - Max: 800 mW, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V.