CC-C2-B15-0322 CoolCAD
Hersteller: CoolCADDescription: SiC Power MOSFET 1200V 12A
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V
FET Feature: Standard
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 26.4 EUR |
| 10+ | 21.12 EUR |
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Technische Details CC-C2-B15-0322 CoolCAD
Description: SiC Power MOSFET 1200V 12A, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 10A, 15V, FET Feature: Standard, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 5mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 200 V.