CMS13N06H8-HF Comchip Technology
Hersteller: Comchip Technology
Description: MOSFET N-CH 60V 56A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
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Technische Details CMS13N06H8-HF Comchip Technology
Description: MOSFET N-CH 60V 56A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1619 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 42.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Bulk.