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CMS40N03H8-HF Comchip Technology


QW-JTR101%20CMS40N03H8-HF%20RevA.pdf Hersteller: Comchip Technology
Description: MOSFET N-CH 30V 31A/40A DFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5x6 (PR-PAK)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 15 V
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Technische Details CMS40N03H8-HF Comchip Technology

Description: MOSFET N-CH 30V 31A/40A DFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 19A, 10V, Power Dissipation (Max): 4.2W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: DFN5x6 (PR-PAK), Part Status: Obsolete, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 15 V.