CPH6411-TL-E Sanyo
Hersteller: Sanyo
Description: N-CHANNL SILICON MOSFET FOR ULTR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: N-CHANNL SILICON MOSFET FOR ULTR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 987+ | 0.51 EUR |
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Technische Details CPH6411-TL-E Sanyo
Description: N-CHANNL SILICON MOSFET FOR ULTR, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: 6-CPH, Part Status: Active, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V.