CSD87330Q3DT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8LSON
Packaging: Bulk
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 1632pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Technische Details CSD87330Q3DT Texas Instruments
Description: MOSFET 2N-CH 30V 20A 8LSON, Packaging: Bulk, Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Supplier Device Package: 8-LSON (3.3x3.3), Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 11.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 1632pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 6W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).