DACMH160N1200 DACO Semiconductor
Hersteller: DACO SemiconductorCategory: Transistor modules MOSFET
Description: Semiconductor module; transistor/transistor; 1.2kV; 110A; HB9434
Type of semiconductor module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Gate-source voltage: -5...20V
On-state resistance: 20mΩ
Drain current: 110A
Power dissipation: 580W
Pulsed drain current: 400A
Drain-source voltage: 1.2kV
Case: HB9434
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 208.79 EUR |
| 3+ | 199.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DACMH160N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Semiconductor module; transistor/transistor; 1.2kV; 110A; HB9434, Type of semiconductor module: MOSFET transistor, Technology: SiC, Topology: MOSFET half-bridge, Electrical mounting: screw, Mechanical mounting: screw, Polarisation: unipolar, Operating temperature: -55...150°C, Gate-source voltage: -5...20V, On-state resistance: 20mΩ, Drain current: 110A, Power dissipation: 580W, Pulsed drain current: 400A, Drain-source voltage: 1.2kV, Case: HB9434, Semiconductor structure: transistor/transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DACMH160N1200 nach Preis ab 199.28 EUR bis 208.79 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
DACMH160N1200 | Hersteller : DACO Semiconductor |
Category: Transistor modules MOSFETDescription: Semiconductor module; transistor/transistor; 1.2kV; 110A; HB9434 Type of semiconductor module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Gate-source voltage: -5...20V On-state resistance: 20mΩ Drain current: 110A Power dissipation: 580W Pulsed drain current: 400A Drain-source voltage: 1.2kV Case: HB9434 Semiconductor structure: transistor/transistor |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|