
DACMH160N1200 DACO Semiconductor

Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 110A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 400A
Power dissipation: 580W
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge
Operating temperature: -55...150°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 204.42 EUR |
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Technische Details DACMH160N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 110A, Case: HB9434, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 20mΩ, Pulsed drain current: 400A, Power dissipation: 580W, Technology: SiC, Gate-source voltage: -5...20V, Mechanical mounting: screw, Topology: MOSFET half-bridge, Operating temperature: -55...150°C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DACMH160N1200 nach Preis ab 204.42 EUR bis 204.42 EUR
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DACMH160N1200 | Hersteller : DACO Semiconductor |
![]() Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 110A Case: HB9434 Electrical mounting: screw Polarisation: unipolar On-state resistance: 20mΩ Pulsed drain current: 400A Power dissipation: 580W Technology: SiC Gate-source voltage: -5...20V Mechanical mounting: screw Topology: MOSFET half-bridge Operating temperature: -55...150°C |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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