Produkte > DACO SEMICONDUCTOR > DACMH160N1200
DACMH160N1200

DACMH160N1200 DACO Semiconductor

pVersion=0046&contRep=ZT&docId=005056AB752F1ED88395B22379202A18&compId=DACMH160N1200.pdf?ci_sign=5dc3f7baceb8ec312e0f606e4a7d09fc9e67f629 Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 110A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 400A
Power dissipation: 580W
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Operating temperature: -55...150°C
Topology: MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+204.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DACMH160N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 110A, Case: HB9434, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 20mΩ, Pulsed drain current: 400A, Power dissipation: 580W, Technology: SiC, Gate-source voltage: -5...20V, Mechanical mounting: screw, Operating temperature: -55...150°C, Topology: MOSFET half-bridge, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote DACMH160N1200 nach Preis ab 204.42 EUR bis 204.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DACMH160N1200 DACMH160N1200 Hersteller : DACO Semiconductor pVersion=0046&contRep=ZT&docId=005056AB752F1ED88395B22379202A18&compId=DACMH160N1200.pdf?ci_sign=5dc3f7baceb8ec312e0f606e4a7d09fc9e67f629 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 110A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 400A
Power dissipation: 580W
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Operating temperature: -55...150°C
Topology: MOSFET half-bridge
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+204.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH