DACMH200N1200 DACO Semiconductor
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Type of module: MOSFET transistor
Power dissipation: 980W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 500A
Operating temperature: -55...150°C
Case: HB9434
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 125A
On-state resistance: 15mΩ
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Type of module: MOSFET transistor
Power dissipation: 980W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 500A
Operating temperature: -55...150°C
Case: HB9434
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 125A
On-state resistance: 15mΩ
Anzahl je Verpackung: 1 Stücke
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Technische Details DACMH200N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W, Type of module: MOSFET transistor, Power dissipation: 980W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, Technology: SiC, Gate-source voltage: -10...20V, Topology: MOSFET half-bridge, Pulsed drain current: 500A, Operating temperature: -55...150°C, Case: HB9434, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 125A, On-state resistance: 15mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DACMH200N1200
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DACMH200N1200 | Hersteller : DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W Type of module: MOSFET transistor Power dissipation: 980W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -10...20V Topology: MOSFET half-bridge Pulsed drain current: 500A Operating temperature: -55...150°C Case: HB9434 Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 125A On-state resistance: 15mΩ |
Produkt ist nicht verfügbar |