DAGNH100600 DACO Semiconductor


pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0870E5BA3B6A143&compId=DAGNH100600.pdf?ci_sign=e8564fef2982d96acda851f2aa30108c96d66398 Hersteller: DACO Semiconductor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Power dissipation: 400W
Case: HW9434
Pulsed collector current: 200A
Collector current: 100A
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Technology: NPT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
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Technische Details DAGNH100600 DACO Semiconductor

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A, Power dissipation: 400W, Case: HW9434, Pulsed collector current: 200A, Collector current: 100A, Electrical mounting: screw, Mechanical mounting: screw, Gate-emitter voltage: ±20V, Technology: NPT, Semiconductor structure: transistor/transistor, Max. off-state voltage: 0.6kV, Topology: IGBT half-bridge, Type of semiconductor module: IGBT, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote DAGNH100600

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DAGNH100600 Hersteller : DACO Semiconductor pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0870E5BA3B6A143&compId=DAGNH100600.pdf?ci_sign=e8564fef2982d96acda851f2aa30108c96d66398 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Power dissipation: 400W
Case: HW9434
Pulsed collector current: 200A
Collector current: 100A
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Technology: NPT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 0.6kV
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH