Produkte > TOSHIBA > DF10G5M4N,LF(D

DF10G5M4N,LF(D TOSHIBA

Hersteller: TOSHIBA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape
Mounting: SMD
Type of diode: TVS array
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 2A
Max. off-state voltage: 3.6V
Number of channels: 4
Peak pulse power dissipation: 30W
Breakdown voltage: 5V
Semiconductor structure: bidirectional
Case: DFN10
Version: ESD

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Technische Details DF10G5M4N,LF(D TOSHIBA

Category: Protection diodes - arrays, Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape, Mounting: SMD, Type of diode: TVS array, Kind of package: reel; tape, Leakage current: 0.1µA, Max. forward impulse current: 2A, Max. off-state voltage: 3.6V, Number of channels: 4, Peak pulse power dissipation: 30W, Breakdown voltage: 5V, Semiconductor structure: bidirectional, Case: DFN10, Version: ESD.