DG20X06T2 STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 200ns
Turn-on time: 26ns
| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 34+ | 2.16 EUR |
| 38+ | 1.92 EUR |
| 42+ | 1.73 EUR |
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Technische Details DG20X06T2 STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 29A; 166W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 600V, Collector current: 29A, Power dissipation: 166W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Mounting: THT, Gate charge: 0.14µC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 200ns, Turn-on time: 26ns.