Produkte > VISHAY SILICONIX > DG2535DN-T1-E4
DG2535DN-T1-E4

DG2535DN-T1-E4 Vishay Siliconix


dg2535.pdf Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 2 500MOHM 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
Supplier Device Package: 10-DFN (3x3)
Voltage - Supply, Single (V+): 3V
Charge Injection: 21pC
Crosstalk: -69dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 82ns, 73ns
Channel Capacitance (CS(off), CD(off)): 145pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
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Technische Details DG2535DN-T1-E4 Vishay Siliconix

Description: IC SWITCH SPDT X 2 500MOHM 10DFN, Packaging: Tape & Reel (TR), Package / Case: 10-VFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), On-State Resistance (Max): 500mOhm, Supplier Device Package: 10-DFN (3x3), Voltage - Supply, Single (V+): 3V, Charge Injection: 21pC, Crosstalk: -69dB @ 100kHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Channel-to-Channel Matching (ΔRon): 50mOhm (Max), Switch Time (Ton, Toff) (Max): 82ns, 73ns, Channel Capacitance (CS(off), CD(off)): 145pF, Current - Leakage (IS(off)) (Max): 1nA, Number of Circuits: 2.