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DGW25N120CTL

DGW25N120CTL Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: Trench
Td (on/off) @ 25°C: 158ns/331ns
Switching Energy: 1.8m (on), 1.4mJ (off)
Test Condition: 600V, 25A, 18Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 326 W
auf Bestellung 180000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+5.68 EUR
9000+ 5.36 EUR
18000+ 5.05 EUR
36000+ 4.73 EUR
72000+ 4.26 EUR
180000+ 3.94 EUR
Mindestbestellmenge: 1800
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Technische Details DGW25N120CTL Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A, Supplier Device Package: TO-247, IGBT Type: Trench, Td (on/off) @ 25°C: 158ns/331ns, Switching Energy: 1.8m (on), 1.4mJ (off), Test Condition: 600V, 25A, 18Ohm, 15V, Gate Charge: 200 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 326 W.