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DGW25N120CTL

DGW25N120CTL Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 25A, 18Ohm, 15V
Switching Energy: 1.8m (on), 1.4mJ (off)
Td (on/off) @ 25°C: 158ns/331ns
IGBT Type: Trench
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1800+5.68 EUR
9000+5.36 EUR
18000+5.05 EUR
36000+4.73 EUR
72000+4.26 EUR
180000+3.94 EUR
Mindestbestellmenge: 1800 Stücke
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Technische Details DGW25N120CTL Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Power - Max: 326 W, Current - Collector Pulsed (Icm): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Gate Charge: 200 nC, Test Condition: 600V, 25A, 18Ohm, 15V, Switching Energy: 1.8m (on), 1.4mJ (off), Td (on/off) @ 25°C: 158ns/331ns, IGBT Type: Trench, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Reel (TR).