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DGW50N65CTL1

DGW50N65CTL1 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 55ns/319ns
Switching Energy: 1.27mJ (on), 650µJ (off)
Test Condition: 300V, 50A, 10Ohm, 15V
Gate Charge: 450 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 326 W
auf Bestellung 180000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+6.59 EUR
9000+ 6.22 EUR
18000+ 5.85 EUR
36000+ 5.49 EUR
72000+ 4.94 EUR
180000+ 4.57 EUR
Mindestbestellmenge: 1800
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Technische Details DGW50N65CTL1 Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, Supplier Device Package: TO-247AB, Td (on/off) @ 25°C: 55ns/319ns, Switching Energy: 1.27mJ (on), 650µJ (off), Test Condition: 300V, 50A, 10Ohm, 15V, Gate Charge: 450 nC, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 326 W.