Technische Details DI016N06PQ2-AQ Diotec Semiconductor
Description: MOSFET 2N-CH 60V 16A 8TDSON, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16.7W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V, Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.
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DI016N06PQ2-AQ | Hersteller : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16.7W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
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