Produkte > DIOTEC SEMICONDUCTOR > DI016N06PQ2-AQ

DI016N06PQ2-AQ Diotec Semiconductor


di016n06pq2.pdf Hersteller: Diotec Semiconductor
Dual NChannel Power MOSFET
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DI016N06PQ2-AQ Diotec Semiconductor

Description: MOSFET 2N-CH 60V 16A 8TDSON, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16.7W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V, Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DI016N06PQ2-AQ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DI016N06PQ2-AQ DI016N06PQ2-AQ Hersteller : Diotec Semiconductor di016n06pq2.pdf Description: MOSFET 2N-CH 60V 16A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH