DI115N06PQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72.5A; Idm: 480A; 78.9W; QFN5x6
Mounting: SMD
Case: QFN5x6
Drain-source voltage: 60V
Drain current: 72.5A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 78.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 480A
Anzahl je Verpackung: 1 Stücke
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Technische Details DI115N06PQ DIOTEC SEMICONDUCTOR
Description: DI115N06PQ, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Power Dissipation (Max): 78.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V.
Weitere Produktangebote DI115N06PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DI115N06PQ | Hersteller : Diotec Semiconductor |
Description: DI115N06PQ Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V |
Produkt ist nicht verfügbar |
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| DI115N06PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72.5A; Idm: 480A; 78.9W; QFN5x6 Mounting: SMD Case: QFN5x6 Drain-source voltage: 60V Drain current: 72.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 78.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 480A |
Produkt ist nicht verfügbar |