DI120SIC026D7 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 117A; Idm: 297A; 535W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 117A
Pulsed drain current: 297A
Power dissipation: 535W
Case: TO263-7
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 117A; Idm: 297A; 535W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 117A
Pulsed drain current: 297A
Power dissipation: 535W
Case: TO263-7
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 64nC
Kind of channel: enhancement
Technology: SiC
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Technische Details DI120SIC026D7 DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 117A; Idm: 297A; 535W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 117A, Pulsed drain current: 297A, Power dissipation: 535W, Case: TO263-7, On-state resistance: 26mΩ, Mounting: SMD, Gate charge: 64nC, Kind of channel: enhancement, Technology: SiC.