DI135N06PQ DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 560A; 92.6W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 85A
Pulsed drain current: 560A
Power dissipation: 92.6W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 5000 Stücke
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Technische Details DI135N06PQ DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 560A; 92.6W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 85A, Pulsed drain current: 560A, Power dissipation: 92.6W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 2.7mΩ, Mounting: SMD, Gate charge: 68nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 5000 Stücke.
Weitere Produktangebote DI135N06PQ
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DI135N06PQ | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 560A; 92.6W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 85A Pulsed drain current: 560A Power dissipation: 92.6W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
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