DI2A2N100D1K-AQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification
N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification
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Technische Details DI2A2N100D1K-AQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 25A; 30W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 1.4A, Pulsed drain current: 25A, Power dissipation: 30W, Case: DPAK, Gate-source voltage: ±25V, On-state resistance: 6.8Ω, Mounting: SMD, Gate charge: 25nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI2A2N100D1K-AQ
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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DI2A2N100D1K-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±25V On-state resistance: 6.8Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI2A2N100D1K-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 25A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 25A Power dissipation: 30W Case: DPAK Gate-source voltage: ±25V On-state resistance: 6.8Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |