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DID3A2N65

DID3A2N65 Diotec Semiconductor

did3a2n65.pdf Hersteller: Diotec Semiconductor
Description: MOSFET IPAK N 650V 3.2A
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 2A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 581 pF @ 25 V
auf Bestellung 5475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
75+0.41 EUR
150+0.36 EUR
525+0.29 EUR
1050+0.26 EUR
2025+0.24 EUR
5025+0.22 EUR
Mindestbestellmenge: 19
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Technische Details DID3A2N65 Diotec Semiconductor

Description: MOSFET IPAK N 650V 3.2A, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 2A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 581 pF @ 25 V.

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DID3A2N65 Hersteller : DIOTEC SEMICONDUCTOR did3a2n65.pdf DID3A2N65-DIO THT N channel transistors
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