DIW065SIC015 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Polarisation: unipolar
Gate-source voltage: -4...15V
Gate charge: 236nC
On-state resistance: 16mΩ
Power dissipation: 550W
Drain current: 100A
Drain-source voltage: 650V
Pulsed drain current: 300A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 32.35 EUR |
| 10+ | 28.86 EUR |
| 30+ | 27.1 EUR |
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Technische Details DIW065SIC015 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W, Mounting: THT, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Case: TO247-3, Polarisation: unipolar, Gate-source voltage: -4...15V, Gate charge: 236nC, On-state resistance: 16mΩ, Power dissipation: 550W, Drain current: 100A, Drain-source voltage: 650V, Pulsed drain current: 300A, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DIW065SIC015 nach Preis ab 27.1 EUR bis 154.33 EUR
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DIW065SIC015 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Case: TO247-3 Polarisation: unipolar Gate-source voltage: -4...15V Gate charge: 236nC On-state resistance: 16mΩ Power dissipation: 550W Drain current: 100A Drain-source voltage: 650V Pulsed drain current: 300A Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DIW065SIC015 | Hersteller : Diotec Semiconductor | SiC MOSFETs SiC MOSFET, TO-247-3L, N, 150A, 650V, 15m?, 175°C |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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