| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.37 EUR |
| 10+ | 16.62 EUR |
| 120+ | 14.33 EUR |
| 510+ | 13.78 EUR |
| 1020+ | 13.76 EUR |
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Technische Details DIW065SIC049 Diotec Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 48A, Power dissipation: 550W, Case: TO247-3, Gate-source voltage: -5...18V, On-state resistance: 50mΩ, Mounting: THT, Gate charge: 128nC, Kind of channel: enhancement, Pulsed drain current: 135A, Kind of package: tube.
Weitere Produktangebote DIW065SIC049
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DIW065SIC049 | DIOTEC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Power dissipation: 550W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 128nC Kind of channel: enhancement Pulsed drain current: 135A Kind of package: tube |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DIW065SIC049 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 128nC
Kind of channel: enhancement
Pulsed drain current: 135A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 128nC
Kind of channel: enhancement
Pulsed drain current: 135A
Kind of package: tube
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)