DIW065SIC049 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 135A
Power dissipation: 550W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 18.7 EUR |
| 5+ | 17.43 EUR |
| 10+ | 16.52 EUR |
| 30+ | 14.29 EUR |
| 120+ | 12.11 EUR |
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Technische Details DIW065SIC049 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 48A, Pulsed drain current: 135A, Power dissipation: 550W, Case: TO247-3, Gate-source voltage: -5...18V, On-state resistance: 50mΩ, Mounting: THT, Gate charge: 128nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DIW065SIC049 nach Preis ab 16.52 EUR bis 18.7 EUR
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DIW065SIC049 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Pulsed drain current: 135A Power dissipation: 550W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 128nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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