DIW120SIC028 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W
Drain-source voltage: 1.2kV
Drain current: 84A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 373nC
Technology: SiC
Gate-source voltage: -5...20V
Pulsed drain current: 295A
Kind of channel: enhancement
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 26.71 EUR |
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Technische Details DIW120SIC028 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W, Drain-source voltage: 1.2kV, Drain current: 84A, On-state resistance: 26mΩ, Type of transistor: N-MOSFET, Power dissipation: 715W, Polarisation: unipolar, Kind of package: tube, Gate charge: 373nC, Technology: SiC, Gate-source voltage: -5...20V, Pulsed drain current: 295A, Kind of channel: enhancement, Mounting: THT, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DIW120SIC028 nach Preis ab 26.71 EUR bis 26.71 EUR
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DIW120SIC028 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W Drain-source voltage: 1.2kV Drain current: 84A On-state resistance: 26mΩ Type of transistor: N-MOSFET Power dissipation: 715W Polarisation: unipolar Kind of package: tube Gate charge: 373nC Technology: SiC Gate-source voltage: -5...20V Pulsed drain current: 295A Kind of channel: enhancement Mounting: THT Case: TO247-3 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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