Technische Details DMN2400UV-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 0.84A, Pulsed drain current: 3A, Power dissipation: 0.53W, Case: SOT563, Gate-source voltage: ±12V, On-state resistance: 1.5Ω, Mounting: SMD, Gate charge: 0.5nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN2400UV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN2400UV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.84A Pulsed drain current: 3A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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| DMN2400UV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 840mA; Idm: 3A; 530mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.84A Pulsed drain current: 3A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±12V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 0.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |