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DMN3013LDG-7 Diodes Incorporated


DIOD_S_A0005736846_1-2542675.pdf
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V-30V
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Technische Details DMN3013LDG-7 Diodes Incorporated

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: 7 inch reel; tape, Pulsed drain current: 80A, Power dissipation: 1.25W, Gate charge: 5.7nC, Polarisation: unipolar, Drain current: 7.6A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±10V, On-state resistance: 17.7mΩ.

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DMN3013LDG-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 17.7mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN3013LDG-7
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.6A; Idm: 80A; 1.25W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed drain current: 80A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
On-state resistance: 17.7mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH