DMN3021LFDF-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 9.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 30V
Drain current: 9.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMN3021LFDF-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W, Mounting: SMD, Case: U-DFN2020-6, Power dissipation: 1.3W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 14nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 50A, Drain-source voltage: 30V, Drain current: 9.4A, On-state resistance: 20mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3021LFDF-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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DMN3021LFDF-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |
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| DMN3021LFDF-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W Mounting: SMD Case: U-DFN2020-6 Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 30V Drain current: 9.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |