Produkte > DIODES INCORPORATED > DMN33D8LTQ-7

DMN33D8LTQ-7 DIODES INCORPORATED

Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523
Drain-source voltage: 30V
Drain current: 0.2A
Case: SOT523
Polarisation: unipolar
On-state resistance: 5Ω
Power dissipation: 0.3W
Application: automotive industry
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 0.55nC

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details DMN33D8LTQ-7 DIODES INCORPORATED

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 200mA; 300mW; SOT523, Drain-source voltage: 30V, Drain current: 0.2A, Case: SOT523, Polarisation: unipolar, On-state resistance: 5Ω, Power dissipation: 0.3W, Application: automotive industry, Type of transistor: N-MOSFET, Mounting: SMD, Gate charge: 0.55nC.