auf Bestellung 11318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.62 EUR |
10+ | 0.43 EUR |
100+ | 0.18 EUR |
1000+ | 0.11 EUR |
10000+ | 0.092 EUR |
20000+ | 0.086 EUR |
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Technische Details DMN3730UFB4-7B Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW, Case: X2-DFN1006-3, Mounting: SMD, Kind of package: reel; tape, Gate charge: 1.6nC, Polarisation: unipolar, Drain current: 730mA, Kind of channel: enhanced, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±8V, On-state resistance: 0.73Ω, Pulsed drain current: 3A, Power dissipation: 0.69W, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3730UFB4-7B
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMN3730UFB4-7B | Hersteller : Diodes Inc | Trans MOSFET N-CH 30V 0.75A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
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DMN3730UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X2-DFN1006-3 Mounting: SMD Kind of package: reel; tape Gate charge: 1.6nC Polarisation: unipolar Drain current: 730mA Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 0.73Ω Pulsed drain current: 3A Power dissipation: 0.69W Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
||
DMN3730UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Case: X2-DFN1006-3 Mounting: SMD Kind of package: reel; tape Gate charge: 1.6nC Polarisation: unipolar Drain current: 730mA Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±8V On-state resistance: 0.73Ω Pulsed drain current: 3A Power dissipation: 0.69W |
Produkt ist nicht verfügbar |