auf Bestellung 4465 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.3 EUR |
| 100+ | 0.13 EUR |
| 1000+ | 0.1 EUR |
| 10000+ | 0.083 EUR |
| 20000+ | 0.079 EUR |
| 50000+ | 0.074 EUR |
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Technische Details DMN3730UFB4-7B Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 1.6nC, On-state resistance: 0.73Ω, Power dissipation: 0.69W, Drain current: 730mA, Pulsed drain current: 3A, Gate-source voltage: ±8V, Drain-source voltage: 30V, Case: X2-DFN1006-3, Kind of package: 7 inch reel; tape.
Weitere Produktangebote DMN3730UFB4-7B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMN3730UFB4-7B | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 30V 0.75A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
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| DMN3730UFB4-7B | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 730mA; Idm: 3A; 690mW Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.6nC On-state resistance: 0.73Ω Power dissipation: 0.69W Drain current: 730mA Pulsed drain current: 3A Gate-source voltage: ±8V Drain-source voltage: 30V Case: X2-DFN1006-3 Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |