DMN63D1LV-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563
Case: SOT563
Mounting: SMD
Power dissipation: 0.94W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 392pC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Drain-source voltage: 60V
Drain current: 0.45A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMN63D1LV-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563, Case: SOT563, Mounting: SMD, Power dissipation: 0.94W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 392pC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 1.2A, Drain-source voltage: 60V, Drain current: 0.45A, On-state resistance: 3Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN63D1LV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN63D1LV-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFETBVDSS: 41V-60V |
Produkt ist nicht verfügbar |
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| DMN63D1LV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 450mA; Idm: 1.2A; 940mW; SOT563 Case: SOT563 Mounting: SMD Power dissipation: 0.94W Polarisation: unipolar Kind of package: reel; tape Gate charge: 392pC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V Drain current: 0.45A On-state resistance: 3Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |