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DMN80H2D0SCTI

DMN80H2D0SCTI Diodes Incorporated


DIOD_S_A0003132653_1-2542398.pdf Hersteller: Diodes Incorporated
MOSFET MOSFETBVDSS: 651V-800V
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Technische Details DMN80H2D0SCTI Diodes Incorporated

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 4A, Pulsed drain current: 28A, Power dissipation: 16W, Case: ITO220AB, Gate-source voltage: ±30V, On-state resistance: 1.4Ω, Mounting: THT, Gate charge: 35.4nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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DMN80H2D0SCTI Hersteller : DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 28A
Power dissipation: 16W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 35.4nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN80H2D0SCTI Hersteller : DIODES INCORPORATED Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 16W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 28A
Power dissipation: 16W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 35.4nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar