DMNH6021SPDWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 8.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type R)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.08 EUR |
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Technische Details DMNH6021SPDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 8.2A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc), Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V, Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type R), Grade: Automotive, Qualification: AEC-Q101.