Technische Details DMP26M1UFG-13 Diodes Inc
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W, Type of transistor: P-MOSFET, Polarisation: unipolar, Case: PowerDI3333-8, Mounting: SMD, Kind of package: 13 inch reel; tape, Drain-source voltage: -20V, Gate charge: 164nC, On-state resistance: 17mΩ, Power dissipation: 3W, Drain current: -56A, Pulsed drain current: -110A, Gate-source voltage: ±10V, Kind of channel: enhancement, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMP26M1UFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| DMP26M1UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: -20V Gate charge: 164nC On-state resistance: 17mΩ Power dissipation: 3W Drain current: -56A Pulsed drain current: -110A Gate-source voltage: ±10V Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP26M1UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Type of transistor: P-MOSFET Polarisation: unipolar Case: PowerDI3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: -20V Gate charge: 164nC On-state resistance: 17mΩ Power dissipation: 3W Drain current: -56A Pulsed drain current: -110A Gate-source voltage: ±10V Kind of channel: enhancement |
Produkt ist nicht verfügbar |