DMP26M1UFG-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Polarisation: unipolar
Pulsed drain current: -110A
Drain current: -56A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 164nC
On-state resistance: 17mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W
Polarisation: unipolar
Pulsed drain current: -110A
Drain current: -56A
Drain-source voltage: -20V
Gate-source voltage: ±10V
Gate charge: 164nC
On-state resistance: 17mΩ
Kind of package: 13 inch reel; tape
Power dissipation: 3W
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Mounting: SMD
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Technische Details DMP26M1UFG-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W, Polarisation: unipolar, Pulsed drain current: -110A, Drain current: -56A, Drain-source voltage: -20V, Gate-source voltage: ±10V, Gate charge: 164nC, On-state resistance: 17mΩ, Kind of package: 13 inch reel; tape, Power dissipation: 3W, Kind of channel: enhancement, Type of transistor: P-MOSFET, Case: PowerDI3333-8, Mounting: SMD.