auf Bestellung 3000 Stücke:
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| Anzahl | Preis |
|---|---|
| 3+ | 1.16 EUR |
| 10+ | 1.03 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.42 EUR |
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Technische Details DMT35M7LFV-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W, On-state resistance: 8.5mΩ, Power dissipation: 1.98W, Gate-source voltage: ±20V, Kind of package: 13 inch reel; tape, Kind of channel: enhancement, Type of transistor: N-MOSFET, Case: PowerDI3333-8, Mounting: SMD, Polarisation: unipolar, Pulsed drain current: 90A, Drain current: 61A, Drain-source voltage: 30V, Gate charge: 36nC.
Weitere Produktangebote DMT35M7LFV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMT35M7LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 90A; 1.98W On-state resistance: 8.5mΩ Power dissipation: 1.98W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Pulsed drain current: 90A Drain current: 61A Drain-source voltage: 30V Gate charge: 36nC |
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