DMTH6005LFG-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 19.7A/100A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.80 EUR |
| 6000+ | 0.76 EUR |
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Technische Details DMTH6005LFG-13 Diodes Incorporated
Description: MOSFET N-CH 60V 19.7A/100A PWRDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 2.38W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V.
Weitere Produktangebote DMTH6005LFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMTH6005LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.9A; Idm: 400A; 2.38W Mounting: SMD Case: PowerDI3333-8 On-state resistance: 7mΩ Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 13.9A Type of transistor: N-MOSFET Power dissipation: 2.38W Polarisation: unipolar Gate charge: 48.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6005LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.9A; Idm: 400A; 2.38W Mounting: SMD Case: PowerDI3333-8 On-state resistance: 7mΩ Kind of package: 13 inch reel; tape Drain-source voltage: 60V Drain current: 13.9A Type of transistor: N-MOSFET Power dissipation: 2.38W Polarisation: unipolar Gate charge: 48.7nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A |
Produkt ist nicht verfügbar |