DMTH6010LPDWQ-13 Diodes Inc

Description: MOSFET 2N-CH 60V 13.1A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.8W (Ta), 37.5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V, Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Grade: Automotive, Qualification: AEC-Q101.