Produkte > ROHM SEMICONDUCTOR > DTC363EUT106

DTC363EUT106 Rohm Semiconductor


DTC363Ex.pdf
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A UMT3
Resistor - Emitter Base (R2): 6.8 kOhms
Resistor - Base (R1): 6.8 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Technische Details DTC363EUT106 Rohm Semiconductor

Description: TRANS PREBIAS NPN 20V 0.6A UMT3, Resistor - Emitter Base (R2): 6.8 kOhms, Resistor - Base (R1): 6.8 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 600 mA, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).