Produkte > EVERLIGHT > EL-MAKR02120PA
EL-MAKR02120PA

EL-MAKR02120PA EVERLIGHT

pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBBEB3BB0B3E340DC&compId=EL-MAKR02120PA.pdf?ci_sign=d3077c3004f2a45ff21fd90e60f242be9a4a7ff4 Hersteller: EVERLIGHT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 90A
Pulsed drain current: 231A
Power dissipation: 465W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.22 EUR
Mindestbestellmenge: 4
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Technische Details EL-MAKR02120PA EVERLIGHT

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 90A, Pulsed drain current: 231A, Power dissipation: 465W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 50mΩ, Mounting: THT, Gate charge: 0.22µC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.