Suchergebnisse für "el-makr02120pa" : 1
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Mindestbestellmenge: 4
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EL-MAKR02120PA | EVERLIGHT |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 90A Pulsed drain current: 231A Power dissipation: 465W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| EL-MAKR02120PA |
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Hersteller: EVERLIGHT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 90A
Pulsed drain current: 231A
Power dissipation: 465W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 90A
Pulsed drain current: 231A
Power dissipation: 465W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 18.22 EUR |