EL-MAKR02120PA EVERLIGHT
Hersteller: EVERLIGHTCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 90A
Pulsed drain current: 231A
Power dissipation: 465W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 18.22 EUR |
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Technische Details EL-MAKR02120PA EVERLIGHT
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 90A, Pulsed drain current: 231A, Power dissipation: 465W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 50mΩ, Mounting: THT, Gate charge: 0.22µC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote EL-MAKR02120PA nach Preis ab 18.22 EUR bis 18.22 EUR
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EL-MAKR02120PA | Hersteller : EVERLIGHT |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 90A Pulsed drain current: 231A Power dissipation: 465W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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