EL-MAKR02120PA EVERLIGHT

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W, Mounting: THT, Power dissipation: 465W, Gate charge: 0.22µC, Polarisation: unipolar, Technology: SiC, Features of semiconductor devices: Kelvin terminal, Drain current: 90A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -4...18V, Kind of package: tube, Case: TO247-4, On-state resistance: 50mΩ, Pulsed drain current: 231A.