Produkte > EVERLIGHT > EL-MAKR0365XA-TC
EL-MAKR0365XA-TC

EL-MAKR0365XA-TC EVERLIGHT


pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB8F40A8D5C5A00DC&compId=EL-MAKR0365XA-TC.pdf?ci_sign=9b0c4c52583ecfdfb0d65cf638e5a43e6aaf7f42 Hersteller: EVERLIGHT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 110A; Idm: 220A; 490W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 110A
Pulsed drain current: 220A
Power dissipation: 490W
Case: TO247-4-TSC
Gate-source voltage: -5...18V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal; SMT Top Side Cooling
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.84 EUR
6+13.08 EUR
10+11.77 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details EL-MAKR0365XA-TC EVERLIGHT

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 110A; Idm: 220A; 490W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 110A, Pulsed drain current: 220A, Power dissipation: 490W, Case: TO247-4-TSC, Gate-source voltage: -5...18V, On-state resistance: 25mΩ, Mounting: SMD, Gate charge: 240nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal; SMT Top Side Cooling, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote EL-MAKR0365XA-TC nach Preis ab 13.08 EUR bis 14.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
EL-MAKR0365XA-TC EL-MAKR0365XA-TC Hersteller : EVERLIGHT pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB8F40A8D5C5A00DC&compId=EL-MAKR0365XA-TC.pdf?ci_sign=9b0c4c52583ecfdfb0d65cf638e5a43e6aaf7f42 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 110A; Idm: 220A; 490W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 110A
Pulsed drain current: 220A
Power dissipation: 490W
Case: TO247-4-TSC
Gate-source voltage: -5...18V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal; SMT Top Side Cooling
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.84 EUR
6+13.08 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH