EL-MAKR04120PA EVERLIGHT
Hersteller: EVERLIGHTCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 171A; 454W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 39A
Pulsed drain current: 171A
Power dissipation: 454W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 15.34 EUR |
| 7+ | 10.54 EUR |
| 8+ | 9.97 EUR |
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Technische Details EL-MAKR04120PA EVERLIGHT
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 171A; 454W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 39A, Pulsed drain current: 171A, Power dissipation: 454W, Case: TO247-4, Gate-source voltage: -4...18V, On-state resistance: 0.1Ω, Mounting: THT, Gate charge: 115nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote EL-MAKR04120PA nach Preis ab 9.97 EUR bis 15.34 EUR
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EL-MAKR04120PA | Hersteller : EVERLIGHT |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 171A; 454W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 39A Pulsed drain current: 171A Power dissipation: 454W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 0.1Ω Mounting: THT Gate charge: 115nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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