EPC7014UBSH EPC Space, LLC
Hersteller: EPC Space, LLC
Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 472.42 EUR |
| 10+ | 452.46 EUR |
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Technische Details EPC7014UBSH EPC Space, LLC
Description: GAN FET HEMT 60V 1A 4UB, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 140µA, Supplier Device Package: 4-SMD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V.