EPC7020GSH EPC Space, LLC
Hersteller: EPC Space, LLCDescription: GAN FET HEMT 200V 80A 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 659.07 EUR |
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Technische Details EPC7020GSH EPC Space, LLC
Description: GAN FET HEMT 200V 80A 5UB, Packaging: Bulk, Package / Case: 5-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: 5-SMD, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V, Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V.