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FDC6327C-F169

FDC6327C-F169 ON Semiconductor


fdc6327c-d.pdf Hersteller: ON Semiconductor
N/P-Channel MOSFET
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Technische Details FDC6327C-F169 ON Semiconductor

Description: DUAL N & P-CHANNEL POWERTRENCH M, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 1.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 325pF @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V, 170mOhm @ 1.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, 4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-23-6.

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FDC6327C-F169 Hersteller : onsemi FDC6327C-D.PDF Description: DUAL N & P-CHANNEL POWERTRENCH M
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 1.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 325pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V, 170mOhm @ 1.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
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