Technische Details FDC6327C-F169 ON Semiconductor
Description: DUAL N & P-CHANNEL POWERTRENCH M, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 1.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 325pF @ 10V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V, 170mOhm @ 1.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, 4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-23-6.
Weitere Produktangebote FDC6327C-F169
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDC6327C-F169 | Hersteller : onsemi |
![]() Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 1.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 325pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V, 170mOhm @ 1.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-23-6 |
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