FDS8958B_G onsemi
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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Technische Details FDS8958B_G onsemi
Description: MOSFET N/P-CH 30V 6.4A/4.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, 760pF @ 15V, Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V, 51mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 9.6nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.