FF05130M2G fastSiC
Hersteller: fastSiCDescription: SICFET N-CH 500V 23A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.18 EUR |
| 10+ | 5.98 EUR |
| 100+ | 4.79 EUR |
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Technische Details FF05130M2G fastSiC
Description: SICFET N-CH 500V 23A PDFN8x8, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ), Supplier Device Package: 4-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): +15V, -8V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V, Qualification: AEC-Q101.